NCE65N1K2R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N1K2R
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 3.4 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 1 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 10 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 12 pF
Resistencia entre drenaje y fuente RDS(on): 1.2 Ohm
Paquete / Cubierta: SOT223
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NCE65N1K2R Datasheet (PDF)
nce65n1k2r.pdf
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NCE65N1K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2f.pdf
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NCE65N1K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2d.pdf
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NCE65N1K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2k.pdf
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NCE65N1K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
nce65n1k2i.pdf
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NCE65N1K2IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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