NCE65N1K2R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N1K2R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 1 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 12 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: SOT223

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NCE65N1K2R datasheet

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 nce65n1k2r.pdf pdf_icon

NCE65N1K2R

NCE65N1K2R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 5.1. Size:802K  ncepower
 nce65n1k2f.pdf pdf_icon

NCE65N1K2R

NCE65N1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 5.2. Size:792K  ncepower
 nce65n1k2d.pdf pdf_icon

NCE65N1K2R

NCE65N1K2D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

 5.3. Size:795K  ncepower
 nce65n1k2k.pdf pdf_icon

NCE65N1K2R

NCE65N1K2K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 1050 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 3.8 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 10 nC power conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE65N180F, NCE65N180K, NCE65N180T, NCE65N180V, NCE65N1K2D, NCE65N1K2F, NCE65N1K2I, NCE65N1K2K, IRF3205, NCE65N230, NCE65N230D, NCE65N230F, NCE65N230I, NCE65N230K, NCE65N260, NCE65N260D, NCE65N260F