All MOSFET. NCE65N1K2R Datasheet

 

NCE65N1K2R Datasheet and Replacement


   Type Designator: NCE65N1K2R
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT223
 

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NCE65N1K2R Datasheet (PDF)

 ..1. Size:819K  ncepower
 nce65n1k2r.pdf pdf_icon

NCE65N1K2R

NCE65N1K2RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.1. Size:802K  ncepower
 nce65n1k2f.pdf pdf_icon

NCE65N1K2R

NCE65N1K2FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.2. Size:792K  ncepower
 nce65n1k2d.pdf pdf_icon

NCE65N1K2R

NCE65N1K2DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

 5.3. Size:795K  ncepower
 nce65n1k2k.pdf pdf_icon

NCE65N1K2R

NCE65N1K2KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1050 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 10 nCpower conversion, and indu

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Datasheet: NCE65N180F , NCE65N180K , NCE65N180T , NCE65N180V , NCE65N1K2D , NCE65N1K2F , NCE65N1K2I , NCE65N1K2K , IRF3205 , NCE65N230 , NCE65N230D , NCE65N230F , NCE65N230I , NCE65N230K , NCE65N260 , NCE65N260D , NCE65N260F .

History: BSC019N04LS | AO3452 | FDS7088N7 | GSM8471 | AP02N90J-HF | PT530BA | IXTF1N450

Keywords - NCE65N1K2R MOSFET datasheet

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