NCE65N260 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N260

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 142 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm

Encapsulados: TO-220

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NCE65N260 datasheet

 ..1. Size:728K  ncepower
 nce65n260.pdf pdf_icon

NCE65N260

NCE65N260 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industri

 0.1. Size:690K  ncepower
 nce65n260f.pdf pdf_icon

NCE65N260

NCE65N260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr

 0.2. Size:713K  ncepower
 nce65n260d.pdf pdf_icon

NCE65N260

NCE65N260D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr

 0.3. Size:736K  ncepower
 nce65n260i.pdf pdf_icon

NCE65N260

NCE65N260I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE65N1K2I, NCE65N1K2K, NCE65N1K2R, NCE65N230, NCE65N230D, NCE65N230F, NCE65N230I, NCE65N230K, 50N06, NCE65N260D, NCE65N260F, NCE65N260I, NCE65N260K, NCE65N290, NCE65N290D, NCE65N290F, NCE65N290I