NCE65N260 Todos los transistores

 

NCE65N260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N260
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO-220
 

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NCE65N260 Datasheet (PDF)

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NCE65N260

NCE65N260N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industri

 0.1. Size:690K  ncepower
 nce65n260f.pdf pdf_icon

NCE65N260

NCE65N260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 0.2. Size:713K  ncepower
 nce65n260d.pdf pdf_icon

NCE65N260

NCE65N260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

 0.3. Size:736K  ncepower
 nce65n260i.pdf pdf_icon

NCE65N260

NCE65N260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE65N1K2I , NCE65N1K2K , NCE65N1K2R , NCE65N230 , NCE65N230D , NCE65N230F , NCE65N230I , NCE65N230K , 50N06 , NCE65N260D , NCE65N260F , NCE65N260I , NCE65N260K , NCE65N290 , NCE65N290D , NCE65N290F , NCE65N290I .

History: HAT2167H | P0550EI | EFC4630R | IPA90R1K2C3 | BSC109N10NS3G | IRFMJ044 | VBM2658

 

 
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