NCE65N260 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N260
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 142 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 14.5 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 22 nC
Tiempo de subida (tr): 9 nS
Conductancia de drenaje-sustrato (Cd): 40 pF
Resistencia entre drenaje y fuente RDS(on): 0.26 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NCE65N260
NCE65N260 Datasheet (PDF)
nce65n260.pdf
NCE65N260N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industri
nce65n260f.pdf
NCE65N260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr
nce65n260d.pdf
NCE65N260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr
nce65n260i.pdf
NCE65N260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr
nce65n260k.pdf
NCE65N260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
