NCE65N260. Аналоги и основные параметры

Наименование производителя: NCE65N260

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 142 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 14.5 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9 ns

Cossⓘ - Выходная емкость: 40 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.26 Ohm

Тип корпуса: TO-220

Аналог (замена) для NCE65N260

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N260 даташит

 ..1. Size:728K  ncepower
 nce65n260.pdf pdf_icon

NCE65N260

NCE65N260 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industri

 0.1. Size:690K  ncepower
 nce65n260f.pdf pdf_icon

NCE65N260

NCE65N260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr

 0.2. Size:713K  ncepower
 nce65n260d.pdf pdf_icon

NCE65N260

NCE65N260D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr

 0.3. Size:736K  ncepower
 nce65n260i.pdf pdf_icon

NCE65N260

NCE65N260I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N1K2I, NCE65N1K2K, NCE65N1K2R, NCE65N230, NCE65N230D, NCE65N230F, NCE65N230I, NCE65N230K, 50N06, NCE65N260D, NCE65N260F, NCE65N260I, NCE65N260K, NCE65N290, NCE65N290D, NCE65N290F, NCE65N290I