NCE65N260I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE65N260I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 142 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 14.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 22 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET NCE65N260I

NCE65N260I Datasheet (PDF)

..1. Size:736K ncepower
nce65n260i.pdf

NCE65N260IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

5.1. Size:690K ncepower
nce65n260f.pdf

NCE65N260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

5.2. Size:713K ncepower
nce65n260d.pdf

NCE65N260DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

5.3. Size:728K ncepower
nce65n260.pdf

NCE65N260N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industri

5.4. Size:720K ncepower
nce65n260k.pdf

NCE65N260KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 230 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 14.5 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 22 nCpower conversion, and industr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: