NCE65N260I Specs and Replacement

Type Designator: NCE65N260I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: TO251

NCE65N260I substitution

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NCE65N260I datasheet

 ..1. Size:736K  ncepower
 nce65n260i.pdf pdf_icon

NCE65N260I

NCE65N260I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr... See More ⇒

 5.1. Size:690K  ncepower
 nce65n260f.pdf pdf_icon

NCE65N260I

NCE65N260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr... See More ⇒

 5.2. Size:713K  ncepower
 nce65n260d.pdf pdf_icon

NCE65N260I

NCE65N260D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industr... See More ⇒

 5.3. Size:728K  ncepower
 nce65n260.pdf pdf_icon

NCE65N260I

NCE65N260 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 230 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 14.5 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 22 nC power conversion, and industri... See More ⇒

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Detailed specifications: NCE65N230, NCE65N230D, NCE65N230F, NCE65N230I, NCE65N230K, NCE65N260, NCE65N260D, NCE65N260F, IRF640, NCE65N260K, NCE65N290, NCE65N290D, NCE65N290F, NCE65N290I, NCE65N290K, NCE65N330, NCE65N330D

Keywords - NCE65N260I MOSFET specs

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