NCE65N290F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N290F

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-220F

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NCE65N290F datasheet

 ..1. Size:699K  ncepower
 nce65n290f.pdf pdf_icon

NCE65N290F

NCE65N290F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and indust

 5.1. Size:725K  ncepower
 nce65n290.pdf pdf_icon

NCE65N290F

NCE65N290 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and industr

 5.2. Size:717K  ncepower
 nce65n290k.pdf pdf_icon

NCE65N290F

NCE65N290K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and indust

 5.3. Size:731K  ncepower
 nce65n290i.pdf pdf_icon

NCE65N290F

NCE65N290I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE65N230K, NCE65N260, NCE65N260D, NCE65N260F, NCE65N260I, NCE65N260K, NCE65N290, NCE65N290D, IRF640N, NCE65N290I, NCE65N290K, NCE65N330, NCE65N330D, NCE65N330F, NCE65N330I, NCE65N330K, NCE65N330R