NCE65N290F Specs and Replacement

Type Designator: NCE65N290F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm

Package: TO-220F

NCE65N290F substitution

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NCE65N290F datasheet

 ..1. Size:699K  ncepower
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NCE65N290F

NCE65N290F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and indust... See More ⇒

 5.1. Size:725K  ncepower
nce65n290.pdf pdf_icon

NCE65N290F

NCE65N290 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and industr... See More ⇒

 5.2. Size:717K  ncepower
nce65n290k.pdf pdf_icon

NCE65N290F

NCE65N290K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and indust... See More ⇒

 5.3. Size:731K  ncepower
nce65n290i.pdf pdf_icon

NCE65N290F

NCE65N290I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 13 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 15 nC power conversion, and indust... See More ⇒

Detailed specifications: NCE65N230K, NCE65N260, NCE65N260D, NCE65N260F, NCE65N260I, NCE65N260K, NCE65N290, NCE65N290D, IRF640N, NCE65N290I, NCE65N290K, NCE65N330, NCE65N330D, NCE65N330F, NCE65N330I, NCE65N330K, NCE65N330R

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