NCE65N330 Todos los transistores

 

NCE65N330 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N330
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 31 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: TO220
 

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NCE65N330 Datasheet (PDF)

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NCE65N330

NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial

 0.1. Size:738K  ncepower
 nce65n330d.pdf pdf_icon

NCE65N330

NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 0.2. Size:759K  ncepower
 nce65n330i.pdf pdf_icon

NCE65N330

NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 0.3. Size:752K  ncepower
 nce65n330r.pdf pdf_icon

NCE65N330

NCE65N330RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE65N260F , NCE65N260I , NCE65N260K , NCE65N290 , NCE65N290D , NCE65N290F , NCE65N290I , NCE65N290K , AON6414A , NCE65N330D , NCE65N330F , NCE65N330I , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F .

History: CTZ2302A | AP02N40K-HF | SPP14N05 | BUK7Y65-100E | MPSW65M045B | PMBFJ177

 

 
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