All MOSFET. NCE65N330 Datasheet

 

NCE65N330 Datasheet and Replacement


   Type Designator: NCE65N330
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO220
 

 NCE65N330 substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE65N330 Datasheet (PDF)

 ..1. Size:754K  ncepower
 nce65n330.pdf pdf_icon

NCE65N330

NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial

 0.1. Size:738K  ncepower
 nce65n330d.pdf pdf_icon

NCE65N330

NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 0.2. Size:759K  ncepower
 nce65n330i.pdf pdf_icon

NCE65N330

NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

 0.3. Size:752K  ncepower
 nce65n330r.pdf pdf_icon

NCE65N330

NCE65N330RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria

SHOW MORE

Datasheet: NCE65N260F , NCE65N260I , NCE65N260K , NCE65N290 , NCE65N290D , NCE65N290F , NCE65N290I , NCE65N290K , AON6414A , NCE65N330D , NCE65N330F , NCE65N330I , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F .

History: IPP65R280C6 | NCE70N290 | IRFI734GPBF | SWU100R10VT | AP65SL600AH | AM7361P | SFF340J

Keywords - NCE65N330 MOSFET datasheet

 NCE65N330 cross reference
 NCE65N330 equivalent finder
 NCE65N330 lookup
 NCE65N330 substitution
 NCE65N330 replacement

 

 
Back to Top

 


 
.