NCE65N330 MOSFET Datasheet: N-Ch, 650V, 11A. Full specification with pinout and replacement list

NCE65N330 Specs and Replacement

   Type Designator: NCE65N330
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TO220

NCE65N330 substitution

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NCE65N330 datasheet

..1. Size:754K ncepower
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NCE65N330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industrial... See More ⇒

0.1. Size:738K ncepower
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NCE65N330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria... See More ⇒

0.2. Size:759K ncepower
nce65n330i.pdf pdf_icon

NCE65N330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria... See More ⇒

0.3. Size:752K ncepower
nce65n330r.pdf pdf_icon

NCE65N330R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria... See More ⇒