NCE65N330I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N330I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 107 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 31 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de NCE65N330I MOSFET
NCE65N330I Datasheet (PDF)
nce65n330i.pdf

NCE65N330IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
nce65n330.pdf

NCE65N330N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industrial
nce65n330d.pdf

NCE65N330DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
nce65n330r.pdf

NCE65N330RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 300 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 11 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 17 nCpower conversion, and industria
Otros transistores... NCE65N290 , NCE65N290D , NCE65N290F , NCE65N290I , NCE65N290K , NCE65N330 , NCE65N330D , NCE65N330F , IRFB4110 , NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K , NCE65N520 .
History: AFC4604W | SI2304DDS | GT55N06 | H5N3007FL-M0 | IXTQ110N055P | IPA60R280CFD7 | 2SK2028-01MR
History: AFC4604W | SI2304DDS | GT55N06 | H5N3007FL-M0 | IXTQ110N055P | IPA60R280CFD7 | 2SK2028-01MR



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