NCE65N330I. Аналоги и основные параметры

Наименование производителя: NCE65N330I

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 107 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 11 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 31 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.33 Ohm

Тип корпуса: TO-251

Аналог (замена) для NCE65N330I

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N330I даташит

 ..1. Size:759K  ncepower
 nce65n330i.pdf pdf_icon

NCE65N330I

NCE65N330I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria

 5.1. Size:754K  ncepower
 nce65n330.pdf pdf_icon

NCE65N330I

NCE65N330 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industrial

 5.2. Size:738K  ncepower
 nce65n330d.pdf pdf_icon

NCE65N330I

NCE65N330D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria

 5.3. Size:752K  ncepower
 nce65n330r.pdf pdf_icon

NCE65N330I

NCE65N330R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 300 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 11 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 17 nC power conversion, and industria

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N290, NCE65N290D, NCE65N290F, NCE65N290I, NCE65N290K, NCE65N330, NCE65N330D, NCE65N330F, AON6414A, NCE65N330K, NCE65N330R, NCE65N460, NCE65N460D, NCE65N460F, NCE65N460I, NCE65N460K, NCE65N520