NCE65N460 Todos los transistores

 

NCE65N460 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N460
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 25 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: TO220
     - Selección de transistores por parámetros

 

NCE65N460 Datasheet (PDF)

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NCE65N460

NCE65N460N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industri

 0.1. Size:716K  ncepower
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NCE65N460

NCE65N460KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

 0.2. Size:711K  ncepower
nce65n460d.pdf pdf_icon

NCE65N460

NCE65N460DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

 0.3. Size:731K  ncepower
nce65n460i.pdf pdf_icon

NCE65N460

NCE65N460IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 410 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 9 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12 nCpower conversion, and industr

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AO4918 | IRFZ24NLPBF | WMP14N65C4 | SFB030N85C3 | NP15P04SLG | UT100N03G-TA3-T | 2SK1185

 

 
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