NCE65N460. Аналоги и основные параметры

Наименование производителя: NCE65N460

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 100 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 6 ns

Cossⓘ - Выходная емкость: 25 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.46 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE65N460

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N460 даташит

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 nce65n460.pdf pdf_icon

NCE65N460

NCE65N460 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industri

 0.1. Size:716K  ncepower
 nce65n460k.pdf pdf_icon

NCE65N460

NCE65N460K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr

 0.2. Size:711K  ncepower
 nce65n460d.pdf pdf_icon

NCE65N460

NCE65N460D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr

 0.3. Size:731K  ncepower
 nce65n460i.pdf pdf_icon

NCE65N460

NCE65N460I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 410 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 9 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12 nC power conversion, and industr

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... NCE65N290I, NCE65N290K, NCE65N330, NCE65N330D, NCE65N330F, NCE65N330I, NCE65N330K, NCE65N330R, P55NF06, NCE65N460D, NCE65N460F, NCE65N460I, NCE65N460K, NCE65N520, NCE65N520D, NCE65N520F, NCE65N520I