NCE65N520D Todos los transistores

 

NCE65N520D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N520D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 93 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 21 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.52 Ohm
   Paquete / Cubierta: TO263
 

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NCE65N520D Datasheet (PDF)

 ..1. Size:731K  ncepower
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NCE65N520D

NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 5.1. Size:730K  ncepower
nce65n520.pdf pdf_icon

NCE65N520D

NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria

 5.2. Size:736K  ncepower
nce65n520k.pdf pdf_icon

NCE65N520D

NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

 5.3. Size:757K  ncepower
nce65n520i.pdf pdf_icon

NCE65N520D

NCE65N520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri

Otros transistores... NCE65N330K , NCE65N330R , NCE65N460 , NCE65N460D , NCE65N460F , NCE65N460I , NCE65N460K , NCE65N520 , 2N7000 , NCE65N520F , NCE65N520I , NCE65N520K , NCE65N760 , NCE65N760D , NCE65N760F , NCE65N760I , NCE65N760K .

History: GP2M002A060XG | SI7682DP

 

 
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