NCE65N520D
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE65N520D
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 93
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 12.8
nC
trⓘ - Rise Time: 6
nS
Cossⓘ -
Output Capacitance: 21
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.52
Ohm
Package:
TO263
NCE65N520D
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE65N520D
Datasheet (PDF)
..1. Size:731K ncepower
nce65n520d.pdf
NCE65N520DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
5.1. Size:730K ncepower
nce65n520.pdf
NCE65N520N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industria
5.2. Size:736K ncepower
nce65n520k.pdf
NCE65N520KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
5.3. Size:757K ncepower
nce65n520i.pdf
NCE65N520IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
5.4. Size:731K ncepower
nce65n520f.pdf
NCE65N520FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 460 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 8 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 12.8 nCpower conversion, and industri
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