NCE65N520I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N520I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 93 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 21 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.53 Ohm

Encapsulados: TO-251

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NCE65N520I datasheet

 ..1. Size:757K  ncepower
 nce65n520i.pdf pdf_icon

NCE65N520I

NCE65N520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri

 5.1. Size:730K  ncepower
 nce65n520.pdf pdf_icon

NCE65N520I

NCE65N520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industria

 5.2. Size:731K  ncepower
 nce65n520d.pdf pdf_icon

NCE65N520I

NCE65N520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri

 5.3. Size:736K  ncepower
 nce65n520k.pdf pdf_icon

NCE65N520I

NCE65N520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri

MOSTRAR MÁS

Otros transistores... NCE65N460, NCE65N460D, NCE65N460F, NCE65N460I, NCE65N460K, NCE65N520, NCE65N520D, NCE65N520F, STP75NF75, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F, NCE65N760I, NCE65N760K, NCE65N800D, NCE65N800F