NCE65N520I MOSFET Datasheet: N-Ch, 650V, 8A. Full specification with pinout and replacement list

NCE65N520I Specs and Replacement

   Type Designator: NCE65N520I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 21 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.53 Ohm
   Package: TO-251

NCE65N520I substitution

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NCE65N520I datasheet

..1. Size:757K ncepower
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NCE65N520I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri... See More ⇒

5.1. Size:730K ncepower
nce65n520.pdf pdf_icon

NCE65N520 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industria... See More ⇒

5.2. Size:731K ncepower
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NCE65N520D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri... See More ⇒

5.3. Size:736K ncepower
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NCE65N520K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 460 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 12.8 nC power conversion, and industri... See More ⇒