NCE65N760 Todos los transistores

 

NCE65N760 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N760
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 73 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 14 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.77 Ohm
   Paquete / Cubierta: TO220
 

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NCE65N760 Datasheet (PDF)

 ..1. Size:728K  ncepower
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NCE65N760

NCE65N760N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industrial

 0.1. Size:729K  ncepower
 nce65n760d.pdf pdf_icon

NCE65N760

NCE65N760DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria

 0.2. Size:735K  ncepower
 nce65n760k.pdf pdf_icon

NCE65N760

NCE65N760KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria

 0.3. Size:755K  ncepower
 nce65n760i.pdf pdf_icon

NCE65N760

NCE65N760IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria

MOSTRAR MÁS

Otros transistores... NCE65N460F , NCE65N460I , NCE65N460K , NCE65N520 , NCE65N520D , NCE65N520F , NCE65N520I , NCE65N520K , IRF1010E , NCE65N760D , NCE65N760F , NCE65N760I , NCE65N760K , NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K .

History: LBSS84WT1G | HMS120N03D

 

 
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