NCE65N760. Аналоги и основные параметры

Наименование производителя: NCE65N760

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 73 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 7 ns

Cossⓘ - Выходная емкость: 14 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.77 Ohm

Тип корпуса: TO220

Аналог (замена) для NCE65N760

- подборⓘ MOSFET транзистора по параметрам

 

NCE65N760 даташит

 ..1. Size:728K  ncepower
 nce65n760.pdf pdf_icon

NCE65N760

NCE65N760 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industrial

 0.1. Size:729K  ncepower
 nce65n760d.pdf pdf_icon

NCE65N760

NCE65N760D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria

 0.2. Size:735K  ncepower
 nce65n760k.pdf pdf_icon

NCE65N760

NCE65N760K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria

 0.3. Size:755K  ncepower
 nce65n760i.pdf pdf_icon

NCE65N760

NCE65N760I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria

ПОКАЗАТЬ ЕЩЁ

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