NCE65N760I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65N760I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 73 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.76 Ohm

Encapsulados: TO-251

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NCE65N760I datasheet

 ..1. Size:755K  ncepower
 nce65n760i.pdf pdf_icon

NCE65N760I

NCE65N760I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria

 5.1. Size:729K  ncepower
 nce65n760d.pdf pdf_icon

NCE65N760I

NCE65N760D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria

 5.2. Size:735K  ncepower
 nce65n760k.pdf pdf_icon

NCE65N760I

NCE65N760K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria

 5.3. Size:728K  ncepower
 nce65n760.pdf pdf_icon

NCE65N760I

NCE65N760 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industrial

MOSTRAR MÁS

Otros transistores... NCE65N520, NCE65N520D, NCE65N520F, NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F, AO3401, NCE65N760K, NCE65N800D, NCE65N800F, NCE65N800I, NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D