NCE65N760I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65N760I
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 73 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 14 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.76 Ohm
Paquete / Cubierta: TO-251
Búsqueda de reemplazo de NCE65N760I MOSFET
NCE65N760I Datasheet (PDF)
nce65n760i.pdf

NCE65N760IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
nce65n760d.pdf

NCE65N760DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
nce65n760k.pdf

NCE65N760KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industria
nce65n760.pdf

NCE65N760N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 680 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 6 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 7.2 nCpower conversion, and industrial
Otros transistores... NCE65N520 , NCE65N520D , NCE65N520F , NCE65N520I , NCE65N520K , NCE65N760 , NCE65N760D , NCE65N760F , AO3400 , NCE65N760K , NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K , NCE65N800R , NCE65N900 , NCE65N900D .
History: 8205B | NCEP01T13B | TPD60R1K4M | ZXMN3B01F | STF34N65M5 | L2N7002DMT1G | SIA921EDJ
History: 8205B | NCEP01T13B | TPD60R1K4M | ZXMN3B01F | STF34N65M5 | L2N7002DMT1G | SIA921EDJ



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
k2645 | tip3055 equivalent | 3sk73 | 13n10 mosfet | 2n3565 transistor | datasheet irfz44n | 2sd1047 transistor | mj802