NCE65N760I Specs and Replacement

Type Designator: NCE65N760I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.76 Ohm

Package: TO-251

NCE65N760I substitution

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NCE65N760I datasheet

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NCE65N760I

NCE65N760I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria... See More ⇒

 5.1. Size:729K  ncepower
 nce65n760d.pdf pdf_icon

NCE65N760I

NCE65N760D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria... See More ⇒

 5.2. Size:735K  ncepower
 nce65n760k.pdf pdf_icon

NCE65N760I

NCE65N760K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industria... See More ⇒

 5.3. Size:728K  ncepower
 nce65n760.pdf pdf_icon

NCE65N760I

NCE65N760 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 680 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 6 A industry s AC-DC SMPS requirements for PFC, AC/DC Qg 7.2 nC power conversion, and industrial... See More ⇒

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Detailed specifications: NCE65N520, NCE65N520D, NCE65N520F, NCE65N520I, NCE65N520K, NCE65N760, NCE65N760D, NCE65N760F, AO3401, NCE65N760K, NCE65N800D, NCE65N800F, NCE65N800I, NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D

Keywords - NCE65N760I MOSFET specs

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