NCE65N800I Todos los transistores

 

NCE65N800I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N800I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.8 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
   Paquete / Cubierta: TO251
 

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NCE65N800I Datasheet (PDF)

 ..1. Size:780K  ncepower
 nce65n800i.pdf pdf_icon

NCE65N800I

NCE65N800IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800I

NCE65N800DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.2. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800I

NCE65N800KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.3. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800I

NCE65N800RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

MOSTRAR MÁS

Otros transistores... NCE65N520K , NCE65N760 , NCE65N760D , NCE65N760F , NCE65N760I , NCE65N760K , NCE65N800D , NCE65N800F , AON7410 , NCE65N800K , NCE65N800R , NCE65N900 , NCE65N900D , NCE65N900F , NCE65N900I , NCE65N900K , NCE65N900R .

History: IRFU540ZPBF | BL23N50-W

 

 
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