Справочник MOSFET. NCE65N800I

 

NCE65N800I Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE65N800I
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5.8 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 18 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.8 Ohm
   Тип корпуса: TO251
     - подбор MOSFET транзистора по параметрам

 

NCE65N800I Datasheet (PDF)

 ..1. Size:780K  ncepower
 nce65n800i.pdf pdf_icon

NCE65N800I

NCE65N800IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.1. Size:816K  ncepower
 nce65n800d.pdf pdf_icon

NCE65N800I

NCE65N800DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.2. Size:786K  ncepower
 nce65n800k.pdf pdf_icon

NCE65N800I

NCE65N800KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

 5.3. Size:817K  ncepower
 nce65n800r.pdf pdf_icon

NCE65N800I

NCE65N800RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 700 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 8.7 nCpower conversion, and indu

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History: SQJ474EP | STP80NE03L-06

 

 
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