NCE65N900I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCE65N900I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO251

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NCE65N900I Datasheet (PDF)

..1. Size:788K ncepower
nce65n900i.pdf

NCE65N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

5.1. Size:834K ncepower
nce65n900r.pdf

NCE65N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

5.2. Size:788K ncepower
nce65n900d.pdf

NCE65N900DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

5.3. Size:803K ncepower
nce65n900.pdf

NCE65N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and industr

5.4. Size:792K ncepower
nce65n900f.pdf

NCE65N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

5.5. Size:795K ncepower
nce65n900k.pdf

NCE65N900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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