NCE65N900I Todos los transistores

 

NCE65N900I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65N900I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 59 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 900 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.1 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO251
 

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NCE65N900I Datasheet (PDF)

 ..1. Size:788K  ncepower
 nce65n900i.pdf pdf_icon

NCE65N900I

NCE65N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.1. Size:834K  ncepower
 nce65n900r.pdf pdf_icon

NCE65N900I

NCE65N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.2. Size:788K  ncepower
 nce65n900d.pdf pdf_icon

NCE65N900I

NCE65N900DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.3. Size:803K  ncepower
 nce65n900.pdf pdf_icon

NCE65N900I

NCE65N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and industr

MOSTRAR MÁS

Otros transistores... NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K , NCE65N800R , NCE65N900 , NCE65N900D , NCE65N900F , 4435 , NCE65N900K , NCE65N900R , NCE65NF023T , NCE65NF023T4 , NCE65NF036T , NCE65NF036T4 , NCE65NF050T , NCE65NF068 .

History: IPAN70R450P7S | NTD78N03 | CS12N65A8H | STU456A | LSG65R380GT | DMP1046UFDB | IPSA70R600P7S

 

 
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