NCE65N900I Specs and Replacement

Type Designator: NCE65N900I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.1 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO251

NCE65N900I substitution

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NCE65N900I datasheet

 ..1. Size:788K  ncepower
 nce65n900i.pdf pdf_icon

NCE65N900I

NCE65N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust... See More ⇒

 5.1. Size:834K  ncepower
 nce65n900r.pdf pdf_icon

NCE65N900I

NCE65N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust... See More ⇒

 5.2. Size:788K  ncepower
 nce65n900d.pdf pdf_icon

NCE65N900I

NCE65N900D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and indust... See More ⇒

 5.3. Size:803K  ncepower
 nce65n900.pdf pdf_icon

NCE65N900I

NCE65N900 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 790 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5.1 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9 nC power conversion, and industr... See More ⇒

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Detailed specifications: NCE65N800D, NCE65N800F, NCE65N800I, NCE65N800K, NCE65N800R, NCE65N900, NCE65N900D, NCE65N900F, 5N65, NCE65N900K, NCE65N900R, NCE65NF023T, NCE65NF023T4, NCE65NF036T, NCE65NF036T4, NCE65NF050T, NCE65NF068

Keywords - NCE65N900I MOSFET specs

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