All MOSFET. NCE65N900I Datasheet

 

NCE65N900I Datasheet and Replacement


   Type Designator: NCE65N900I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 59 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.1 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 12 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO251
 

 NCE65N900I substitution

   - MOSFET ⓘ Cross-Reference Search

 

NCE65N900I Datasheet (PDF)

 ..1. Size:788K  ncepower
 nce65n900i.pdf pdf_icon

NCE65N900I

NCE65N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.1. Size:834K  ncepower
 nce65n900r.pdf pdf_icon

NCE65N900I

NCE65N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.2. Size:788K  ncepower
 nce65n900d.pdf pdf_icon

NCE65N900I

NCE65N900DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and indust

 5.3. Size:803K  ncepower
 nce65n900.pdf pdf_icon

NCE65N900I

NCE65N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 790 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5.1 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9 nCpower conversion, and industr

SHOW MORE

Datasheet: NCE65N800D , NCE65N800F , NCE65N800I , NCE65N800K , NCE65N800R , NCE65N900 , NCE65N900D , NCE65N900F , 4435 , NCE65N900K , NCE65N900R , NCE65NF023T , NCE65NF023T4 , NCE65NF036T , NCE65NF036T4 , NCE65NF050T , NCE65NF068 .

History: QM3005N3 | SSM5G04TU | IRF6216PBF-1 | QM4014D | PMZB380XN | ELM13400CA-S | P1010AT

Keywords - NCE65N900I MOSFET datasheet

 NCE65N900I cross reference
 NCE65N900I equivalent finder
 NCE65N900I lookup
 NCE65N900I substitution
 NCE65N900I replacement

 

 
Back to Top

 


 
.