NCE65NF036T
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65NF036T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 488
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 650
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 70
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 37
nS
Cossⓘ - Capacitancia
de salida: 263
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036
Ohm
Paquete / Cubierta:
TO-247
- Selección de transistores por parámetros
NCE65NF036T
Datasheet (PDF)
..1. Size:942K ncepower
nce65nf036t.pdf 
NCE65NF036TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PFC
0.1. Size:851K ncepower
nce65nf036t4.pdf
NCE65NF036T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PF
6.1. Size:856K ncepower
nce65nf099t.pdf
NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
6.2. Size:726K ncepower
nce65nf099ll.pdf
NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A
6.3. Size:782K ncepower
nce65nf023t4.pdf
NCE65NF023T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 21 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 96 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 183 nCSMPS requirements for PF
6.4. Size:709K ncepower
nce65nf099d.pdf
NCE65NF099DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
6.5. Size:728K ncepower
nce65nf068ll.pdf
NCE65NF068LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industri
6.6. Size:709K ncepower
nce65nf099v.pdf
NCE65NF099VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
6.7. Size:726K ncepower
nce65nf068t.pdf
NCE65NF068TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
6.8. Size:775K ncepower
nce65nf068d.pdf
NCE65NF068DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
6.9. Size:727K ncepower
nce65nf099f.pdf
NCE65NF099FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
6.10. Size:726K ncepower
nce65nf068v.pdf
NCE65NF068VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
6.11. Size:738K ncepower
nce65nf068.pdf
NCE65NF068N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industrial
6.12. Size:728K ncepower
nce65nf099.pdf
NCE65NF099N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC/
6.13. Size:863K ncepower
nce65nf050t.pdf
NCE65NF050TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 45 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 56 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 101 nCSMPS requirements for PFC
6.14. Size:912K ncepower
nce65nf023t.pdf
NCE65NF023TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 21 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 96 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 183 nCSMPS requirements for PFC
6.15. Size:709K ncepower
nce65nf068f.pdf
NCE65NF068FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 60 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 45 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 65 nCpower conversion, and industria
Otros transistores... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: FK30SM-5
| SIHF10N40D
| SI2202
| SL4813A
| P3506DD
