All MOSFET. NCE65NF036T Datasheet

 

NCE65NF036T Datasheet and Replacement


   Type Designator: NCE65NF036T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 488 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TO-247
 

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NCE65NF036T Datasheet (PDF)

 ..1. Size:942K  ncepower
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NCE65NF036T

NCE65NF036TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PFC

 0.1. Size:851K  ncepower
nce65nf036t4.pdf pdf_icon

NCE65NF036T

NCE65NF036T4N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 30 mDS(ON)TYP.and low gate charge and With a rapid recovery bodyI 70 ADdiode.This super junction MOSFET fits the industrys AC-DCQg 125 nCSMPS requirements for PF

 6.1. Size:856K  ncepower
nce65nf099t.pdf pdf_icon

NCE65NF036T

NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC

 6.2. Size:726K  ncepower
nce65nf099ll.pdf pdf_icon

NCE65NF036T

NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A

Datasheet: NCE65N900 , NCE65N900D , NCE65N900F , NCE65N900I , NCE65N900K , NCE65N900R , NCE65NF023T , NCE65NF023T4 , IRLB4132 , NCE65NF036T4 , NCE65NF050T , NCE65NF068 , NCE65NF068D , NCE65NF068F , NCE65NF068LL , NCE65NF068T , NCE65NF068V .

History: FQP19N10L | SI1031R | SVF12N65CK | AFP1433 | DAMH300N150 | NCE65NF190V | AP72T03GP-HF

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