NCE65NF099LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE65NF099LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 346 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 14 nS
Cossⓘ - Capacitancia de salida: 96 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
Paquete / Cubierta: TOLL
Búsqueda de reemplazo de NCE65NF099LL MOSFET
NCE65NF099LL Datasheet (PDF)
nce65nf099ll.pdf

NCE65NF099LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, A
nce65nf099t.pdf

NCE65NF099TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
nce65nf099d.pdf

NCE65NF099DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
nce65nf099v.pdf

NCE65NF099VN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide ultra-low RDS(ON)R 85 mDS(ON)TYPand low gate charge and With a rapid recovery bodyID 36 Adiode.This super junction MOSFET fits the industrys AC-DCQg 55 nCSMPS requirements for PFC, AC
Otros transistores... NCE65NF068D , NCE65NF068F , NCE65NF068LL , NCE65NF068T , NCE65NF068V , NCE65NF099 , NCE65NF099D , NCE65NF099F , STP80NF70 , NCE65NF099T , NCE65NF099V , NCE65NF190 , NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCE65NF190T .
History: AFP2319AS | SWN4N65K2 | SVS65R240FJDD4 | HTN027N03P | SVS11N65T | AP2608AGK-HF | 15NM70G-TM3-T
History: AFP2319AS | SWN4N65K2 | SVS65R240FJDD4 | HTN027N03P | SVS11N65T | AP2608AGK-HF | 15NM70G-TM3-T



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL1010PU | JMSL1010PP | JMSL1010PKS | JMSL1010PK | JMSL1010PGS | JMSL1010PGQ | JMSL1010PGD | JMSL1010PG | JMSL1010PE | JMSL1010PC | JMSL1010AUQ | JMSL1010AU | JMSL1010AP | JMSL1010AKQ | JMSL1010AK | JMSL1010AGQ
Popular searches
c1384 transistor | 2sc1175 | 2sc632 | mje15030 transistor equivalent | 13003b | 2n6121 | 2sc1312 | bf495 transistor equivalent