NCE65NF099LL. Аналоги и основные параметры
Наименование производителя: NCE65NF099LL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 346 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 36 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 14 ns
Cossⓘ - Выходная емкость: 96 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.099 Ohm
Тип корпуса: TOLL
Аналог (замена) для NCE65NF099LL
- подборⓘ MOSFET транзистора по параметрам
NCE65NF099LL даташит
nce65nf099ll.pdf
NCE65NF099LL N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, A
nce65nf099t.pdf
NCE65NF099T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
nce65nf099d.pdf
NCE65NF099D N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
nce65nf099v.pdf
NCE65NF099V N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 710 V DS min@Tjmax junction technology and design to provide ultra-low RDS(ON) R 85 m DS(ON)TYP and low gate charge and With a rapid recovery body ID 36 A diode.This super junction MOSFET fits the industry s AC-DC Qg 55 nC SMPS requirements for PFC, AC
Другие IGBT... NCE65NF068D, NCE65NF068F, NCE65NF068LL, NCE65NF068T, NCE65NF068V, NCE65NF099, NCE65NF099D, NCE65NF099F, 10N65, NCE65NF099T, NCE65NF099V, NCE65NF190, NCE65NF190D, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T
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