NCE65NF190 Todos los transistores

 

NCE65NF190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65NF190
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 194 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO-220
 

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NCE65NF190 Datasheet (PDF)

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NCE65NF190

NCE65NF190N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industria

 0.1. Size:717K  ncepower
nce65nf190ll.pdf pdf_icon

NCE65NF190

NCE65NF190LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industr

 0.2. Size:711K  ncepower
nce65nf190k.pdf pdf_icon

NCE65NF190

NCE65NF190KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

 0.3. Size:725K  ncepower
nce65nf190f.pdf pdf_icon

NCE65NF190

NCE65NF190FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

Otros transistores... NCE65NF068T , NCE65NF068V , NCE65NF099 , NCE65NF099D , NCE65NF099F , NCE65NF099LL , NCE65NF099T , NCE65NF099V , IRFZ46N , NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCE65NF190T , NCE65NF190V , NCE65T130T , NCE65T180V .

History: LBSS84WT1G | HMS120N03D

 

 
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