All MOSFET. NCE65NF190 Datasheet

 

NCE65NF190 Datasheet and Replacement


   Type Designator: NCE65NF190
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 194 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO-220
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NCE65NF190 Datasheet (PDF)

 ..1. Size:719K  ncepower
 nce65nf190.pdf pdf_icon

NCE65NF190

NCE65NF190N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industria

 0.1. Size:717K  ncepower
 nce65nf190ll.pdf pdf_icon

NCE65NF190

NCE65NF190LLN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industr

 0.2. Size:711K  ncepower
 nce65nf190k.pdf pdf_icon

NCE65NF190

NCE65NF190KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

 0.3. Size:725K  ncepower
 nce65nf190f.pdf pdf_icon

NCE65NF190

NCE65NF190FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 710 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 165 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theID 18 Aindustrys AC-DC SMPS requirements for PFC, AC/DCQg 30 nCpower conversion, and industri

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History: ALD1103DB | CHM85A3PAGP | SML100L16 | SQ9407EY-T1 | TK7P65W | SFFX054Z

Keywords - NCE65NF190 MOSFET datasheet

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