NCE65T1K9I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE65T1K9I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.9 Ohm

Encapsulados: TO-251

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NCE65T1K9I datasheet

 ..1. Size:481K  ncepower
 nce65t1k9i.pdf pdf_icon

NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..2. Size:481K  ncepower
 nce65t1k9i nce65t1k9k.pdf pdf_icon

NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:481K  ncepower
 nce65t1k9k.pdf pdf_icon

NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 3 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 6.1. Size:599K  ncepower
 nce65t1k2 nce65t1k2d nce65t1k2f.pdf pdf_icon

NCE65T1K9I

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DS junction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the ID 4 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and

MOSTRAR MÁS

Otros transistores... NCE65NF190D, NCE65NF190F, NCE65NF190K, NCE65NF190LL, NCE65NF190T, NCE65NF190V, NCE65T130T, NCE65T180V, 8N60, NCE65T1K9K, NCE65TF078T, NCE6602N, NCE6890D, NCE70H10F, NCE70N100I, NCE70N1K1D, NCE70N1K1F