NCE65T1K9I Todos los transistores

 

NCE65T1K9I MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE65T1K9I
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 22 W
   Voltaje máximo drenador - fuente |Vds|: 650 V
   Voltaje máximo fuente - puerta |Vgs|: 30 V
   Corriente continua de drenaje |Id|: 3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 9 nC
   Tiempo de subida (tr): 9 nS
   Conductancia de drenaje-sustrato (Cd): 10 pF
   Resistencia entre drenaje y fuente RDS(on): 1.9 Ohm
   Paquete / Cubierta: TO-251

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NCE65T1K9I Datasheet (PDF)

 ..1. Size:481K  ncepower
nce65t1k9i nce65t1k9k.pdf

NCE65T1K9I
NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 3 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 6.1. Size:599K  ncepower
nce65t1k2 nce65t1k2d nce65t1k2f.pdf

NCE65T1K9I
NCE65T1K9I

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

 6.2. Size:476K  ncepower
nce65t1k2k nce65t1k2i.pdf

NCE65T1K9I
NCE65T1K9I

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 6.3. Size:476K  ncepower
nce65t1k2i nce65t1k2k.pdf

NCE65T1K9I
NCE65T1K9I

NCE65T1K2K,NCE65T1K2I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industria

 6.4. Size:599K  ncepower
nce65t1k2f.pdf

NCE65T1K9I
NCE65T1K9I

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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