All MOSFET. NCE65T1K9I Datasheet

 

NCE65T1K9I Datasheet and Replacement


   Type Designator: NCE65T1K9I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 22 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO-251
 

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NCE65T1K9I Datasheet (PDF)

 ..1. Size:481K  ncepower
 nce65t1k9i.pdf pdf_icon

NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 3 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 ..2. Size:481K  ncepower
 nce65t1k9i nce65t1k9k.pdf pdf_icon

NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 3 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 5.1. Size:481K  ncepower
 nce65t1k9k.pdf pdf_icon

NCE65T1K9I

NCE65T1K9K,NCE65T1K9I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 1600 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 3 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

 6.1. Size:599K  ncepower
 nce65t1k2 nce65t1k2d nce65t1k2f.pdf pdf_icon

NCE65T1K9I

NCE65T1K2,NCE65T1K2D,NCE65T1K2F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 650 V DSjunction technology and design to provide excellent RDS(ON) R 950 m DS(ON)TYP.with low gate charge. This super junction MOSFET fits the ID 4 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

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Datasheet: NCE65NF190D , NCE65NF190F , NCE65NF190K , NCE65NF190LL , NCE65NF190T , NCE65NF190V , NCE65T130T , NCE65T180V , K2611 , NCE65T1K9K , NCE65TF078T , NCE6602N , NCE6890D , NCE70H10F , NCE70N100I , NCE70N1K1D , NCE70N1K1F .

History: TPW80R300C

Keywords - NCE65T1K9I MOSFET datasheet

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