NCE6890D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE6890D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 94 nS

Cossⓘ - Capacitancia de salida: 450 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm

Encapsulados: TO-263

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NCE6890D datasheet

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NCE6890D

Pb Free Product http //www.ncepower.com NCE6890D NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

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nce6890k.pdf pdf_icon

NCE6890D

http //www.ncepower.com NCE6890K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 7.2. Size:338K  ncepower
nce6890.pdf pdf_icon

NCE6890D

NCE6890 http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.1. Size:326K  ncepower
nce6802.pdf pdf_icon

NCE6890D

http //www.ncepower.com NCE6802 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

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