NCE6890D Todos los transistores

 

NCE6890D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE6890D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 130 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 94 nS
   Cossⓘ - Capacitancia de salida: 450 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0075 Ohm
   Paquete / Cubierta: TO-263
 

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NCE6890D Datasheet (PDF)

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NCE6890D

Pb Free Producthttp://www.ncepower.com NCE6890DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 7.1. Size:420K  ncepower
nce6890k.pdf pdf_icon

NCE6890D

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 7.2. Size:338K  ncepower
nce6890.pdf pdf_icon

NCE6890D

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.1. Size:326K  ncepower
nce6802.pdf pdf_icon

NCE6890D

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

Otros transistores... NCE65NF190T , NCE65NF190V , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , IRF730 , NCE70H10F , NCE70N100I , NCE70N1K1D , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R , NCE70N1K4F .

History: KI2304DS | IPB120P04P4L-03 | HSU80N03

 

 
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