Справочник MOSFET. NCE6890D

 

NCE6890D Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE6890D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 130 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 68 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 90 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 94 ns
   Cossⓘ - Выходная емкость: 450 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0075 Ohm
   Тип корпуса: TO-263
 

 Аналог (замена) для NCE6890D

   - подбор ⓘ MOSFET транзистора по параметрам

 

NCE6890D Datasheet (PDF)

 ..1. Size:321K  ncepower
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NCE6890D

Pb Free Producthttp://www.ncepower.com NCE6890DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 7.1. Size:420K  ncepower
nce6890k.pdfpdf_icon

NCE6890D

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 7.2. Size:338K  ncepower
nce6890.pdfpdf_icon

NCE6890D

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.1. Size:326K  ncepower
nce6802.pdfpdf_icon

NCE6890D

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

Другие MOSFET... NCE65NF190T , NCE65NF190V , NCE65T130T , NCE65T180V , NCE65T1K9I , NCE65T1K9K , NCE65TF078T , NCE6602N , IRF730 , NCE70H10F , NCE70N100I , NCE70N1K1D , NCE70N1K1F , NCE70N1K1I , NCE70N1K1K , NCE70N1K1R , NCE70N1K4F .

History: PP9H06BD | NCEP60T18D | STF15NM60N | RQ3E100MN | 2SK982 | DAMH220N150 | 2SJ302-Z

 

 
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