Справочник MOSFET. NCE6890D

 

NCE6890D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NCE6890D
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 130 W
   Предельно допустимое напряжение сток-исток |Uds|: 68 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 4 V
   Максимально допустимый постоянный ток стока |Id|: 90 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 35 nC
   Время нарастания (tr): 94 ns
   Выходная емкость (Cd): 450 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0075 Ohm
   Тип корпуса: TO-263

 Аналог (замена) для NCE6890D

 

 

NCE6890D Datasheet (PDF)

 ..1. Size:321K  ncepower
nce6890d.pdf

NCE6890D
NCE6890D

Pb Free Producthttp://www.ncepower.com NCE6890DNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 7.1. Size:420K  ncepower
nce6890k.pdf

NCE6890D
NCE6890D

http://www.ncepower.com NCE6890KNCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A Schematic diagram RDS(ON)

 7.2. Size:338K  ncepower
nce6890.pdf

NCE6890D
NCE6890D

NCE6890http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6890 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 68V,ID =90A RDS(ON)

 9.1. Size:326K  ncepower
nce6802.pdf

NCE6890D
NCE6890D

http://www.ncepower.com NCE6802NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6802 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = 30V,ID = 3.5A RDS(ON)

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