NCE70N380 Todos los transistores

 

NCE70N380 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE70N380
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 107 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.5 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm
   Paquete / Cubierta: TO220
 

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NCE70N380 Datasheet (PDF)

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NCE70N380

NCE70N380N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and ind

 0.1. Size:809K  ncepower
 nce70n380k.pdf pdf_icon

NCE70N380

NCE70N380KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 0.2. Size:941K  ncepower
 nce70n380t.pdf pdf_icon

NCE70N380

NCE70N380TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 0.3. Size:863K  ncepower
 nce70n380r.pdf pdf_icon

NCE70N380

NCE70N380RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

MOSTRAR MÁS

Otros transistores... NCE70N1K4I , NCE70N1K4K , NCE70N1K4R , NCE70N290 , NCE70N290D , NCE70N290F , NCE70N290I , NCE70N290K , AO4468 , NCE70N380D , NCE70N380F , NCE70N380I , NCE70N380K , NCE70N380R , NCE70N600 , NCE70N600F , NCE70N600K .

History: SPB16N50C3 | 2P7154VC

 

 
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