NCE70N380
MOSFET. Datasheet pdf. Equivalent
Type Designator: NCE70N380
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 107
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 10.5
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 19.3
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 29
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.39
Ohm
Package:
TO220
NCE70N380
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NCE70N380
Datasheet (PDF)
..1. Size:817K ncepower
nce70n380.pdf 
NCE70N380N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and ind
0.1. Size:809K ncepower
nce70n380k.pdf
NCE70N380KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
0.2. Size:941K ncepower
nce70n380t.pdf
NCE70N380TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
0.3. Size:863K ncepower
nce70n380r.pdf
NCE70N380RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
0.4. Size:825K ncepower
nce70n380i.pdf
NCE70N380IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
0.5. Size:781K ncepower
nce70n380f.pdf
NCE70N380FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
0.6. Size:804K ncepower
nce70n380d.pdf
NCE70N380DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
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