NCE70N380I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70N380I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 29 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.39 Ohm

Encapsulados: TO-251

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NCE70N380I datasheet

 ..1. Size:825K  ncepower
 nce70n380i.pdf pdf_icon

NCE70N380I

NCE70N380I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in

 5.1. Size:809K  ncepower
 nce70n380k.pdf pdf_icon

NCE70N380I

NCE70N380K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in

 5.2. Size:817K  ncepower
 nce70n380.pdf pdf_icon

NCE70N380I

NCE70N380 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and ind

 5.3. Size:941K  ncepower
 nce70n380t.pdf pdf_icon

NCE70N380I

NCE70N380T N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in

MOSTRAR MÁS

Otros transistores... NCE70N290, NCE70N290D, NCE70N290F, NCE70N290I, NCE70N290K, NCE70N380, NCE70N380D, NCE70N380F, IRF730, NCE70N380K, NCE70N380R, NCE70N600, NCE70N600F, NCE70N600K, NCE70N900, NCE70N900F, NCE70N900I