NCE70N380I MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NCE70N380I
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 107 W
Предельно допустимое напряжение сток-исток |Uds|: 700 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 10.5 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 19.3 nC
Время нарастания (tr): 7 ns
Выходная емкость (Cd): 29 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.39 Ohm
Тип корпуса: TO-251
Аналог (замена) для NCE70N380I
NCE70N380I Datasheet (PDF)
nce70n380i.pdf
NCE70N380IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
nce70n380k.pdf
NCE70N380KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
nce70n380.pdf
NCE70N380N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and ind
nce70n380t.pdf
NCE70N380TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
nce70n380r.pdf
NCE70N380RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
nce70n380f.pdf
NCE70N380FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
nce70n380d.pdf
NCE70N380DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: LSH80R980GT
