NCE70N600K Todos los transistores

 

NCE70N600K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NCE70N600K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 93 W
   Voltaje máximo drenador - fuente |Vds|: 700 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 7 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
   Carga de la puerta (Qg): 9.2 nC
   Tiempo de subida (tr): 6 nS
   Conductancia de drenaje-sustrato (Cd): 21 pF
   Resistencia entre drenaje y fuente RDS(on): 0.61 Ohm
   Paquete / Cubierta: TO-252

 Búsqueda de reemplazo de MOSFET NCE70N600K

 

NCE70N600K Datasheet (PDF)

 ..1. Size:789K  ncepower
nce70n600k.pdf

NCE70N600K
NCE70N600K

NCE70N600KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 540 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.2 nCpower conversion, and indust

 5.1. Size:783K  ncepower
nce70n600.pdf

NCE70N600K
NCE70N600K

NCE70N600N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 540 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.2 nCpower conversion, and industr

 5.2. Size:760K  ncepower
nce70n600f.pdf

NCE70N600K
NCE70N600K

NCE70N600FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 540 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 7 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.2 nCpower conversion, and indust

 8.1. Size:809K  ncepower
nce70n380k.pdf

NCE70N600K
NCE70N600K

NCE70N380KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 8.2. Size:794K  ncepower
nce70n1k4k.pdf

NCE70N600K
NCE70N600K

NCE70N1K4KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 8.3. Size:791K  ncepower
nce70n1k1k.pdf

NCE70N600K
NCE70N600K

NCE70N1K1KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 8.4. Size:814K  ncepower
nce70n290.pdf

NCE70N600K
NCE70N600K

NCE70N290N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indus

 8.5. Size:813K  ncepower
nce70n900f.pdf

NCE70N600K
NCE70N600K

NCE70N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 8.6. Size:842K  ncepower
nce70n900r.pdf

NCE70N600K
NCE70N600K

NCE70N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 8.7. Size:817K  ncepower
nce70n380.pdf

NCE70N600K
NCE70N600K

NCE70N380N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and ind

 8.8. Size:941K  ncepower
nce70n380t.pdf

NCE70N600K
NCE70N600K

NCE70N380TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 8.9. Size:826K  ncepower
nce70n900i.pdf

NCE70N600K
NCE70N600K

NCE70N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industr

 8.10. Size:870K  ncepower
nce70n1k4r.pdf

NCE70N600K
NCE70N600K

NCE70N1K4RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 8.11. Size:804K  ncepower
nce70n1k1f.pdf

NCE70N600K
NCE70N600K

NCE70N1K1FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 8.12. Size:800K  ncepower
nce70n290d.pdf

NCE70N600K
NCE70N600K

NCE70N290DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 8.13. Size:800K  ncepower
nce70n900k.pdf

NCE70N600K
NCE70N600K

NCE70N900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 8.14. Size:811K  ncepower
nce70n1k1i.pdf

NCE70N600K
NCE70N600K

NCE70N1K1IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 8.15. Size:814K  ncepower
nce70n1k4i.pdf

NCE70N600K
NCE70N600K

NCE70N1K4IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

 8.16. Size:804K  ncepower
nce70n290i.pdf

NCE70N600K
NCE70N600K

NCE70N290IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 8.17. Size:783K  ncepower
nce70n290f.pdf

NCE70N600K
NCE70N600K

NCE70N290FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 8.18. Size:938K  ncepower
nce70n290t.pdf

NCE70N600K
NCE70N600K

NCE70N290TN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 8.19. Size:873K  ncepower
nce70n1k1r.pdf

NCE70N600K
NCE70N600K

NCE70N1K1RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 8.20. Size:863K  ncepower
nce70n380r.pdf

NCE70N600K
NCE70N600K

NCE70N380RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 8.21. Size:825K  ncepower
nce70n380i.pdf

NCE70N600K
NCE70N600K

NCE70N380IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 8.22. Size:798K  ncepower
nce70n900.pdf

NCE70N600K
NCE70N600K

NCE70N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industri

 8.23. Size:781K  ncepower
nce70n380f.pdf

NCE70N600K
NCE70N600K

NCE70N380FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 8.24. Size:390K  ncepower
nce70n100i.pdf

NCE70N600K
NCE70N600K

Pb Free Producthttp://www.ncepower.com NCE70N100INCE N-Channel Enhancement Mode Power MOSFET Description The NCE70N100I uses advanced trench technology and Ddesign to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GGeneral Features S VDS = 100V,ID =57A RDS(ON)

 8.25. Size:786K  ncepower
nce70n1k1d.pdf

NCE70N600K
NCE70N600K

NCE70N1K1DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1000 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 4.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.5 nCpower conversion, and ind

 8.26. Size:804K  ncepower
nce70n380d.pdf

NCE70N600K
NCE70N600K

NCE70N380DN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 330 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 10.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 19.3 nCpower conversion, and in

 8.27. Size:806K  ncepower
nce70n290k.pdf

NCE70N600K
NCE70N600K

NCE70N290KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 13 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 16.5 nCpower conversion, and indu

 8.28. Size:803K  ncepower
nce70n1k4f.pdf

NCE70N600K
NCE70N600K

NCE70N1K4FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 1200 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 3.5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 5 nCpower conversion, and indus

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