NCE70N600K Specs and Replacement

Type Designator: NCE70N600K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 93 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 21 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.61 Ohm

Package: TO-252

NCE70N600K substitution

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NCE70N600K datasheet

 ..1. Size:789K  ncepower
nce70n600k.pdf pdf_icon

NCE70N600K

NCE70N600K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and indust... See More ⇒

 5.1. Size:783K  ncepower
nce70n600.pdf pdf_icon

NCE70N600K

NCE70N600 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and industr... See More ⇒

 5.2. Size:760K  ncepower
nce70n600f.pdf pdf_icon

NCE70N600K

NCE70N600F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 7 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.2 nC power conversion, and indust... See More ⇒

 8.1. Size:809K  ncepower
nce70n380k.pdf pdf_icon

NCE70N600K

NCE70N380K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 330 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 10.5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 19.3 nC power conversion, and in... See More ⇒

Detailed specifications: NCE70N380, NCE70N380D, NCE70N380F, NCE70N380I, NCE70N380K, NCE70N380R, NCE70N600, NCE70N600F, 20N60, NCE70N900, NCE70N900F, NCE70N900I, NCE70N900K, NCE70N900R, NCE70T1K2F, NCE70T260I, NCE70T260K

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