NCE70N900K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70N900K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 73 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 5 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 9.7 nC
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 14 pF
Resistencia entre drenaje y fuente RDS(on): 0.9 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET NCE70N900K
NCE70N900K Datasheet (PDF)
nce70n900k.pdf
NCE70N900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust
nce70n900f.pdf
NCE70N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust
nce70n900r.pdf
NCE70N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust
nce70n900i.pdf
NCE70N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industr
nce70n900.pdf
NCE70N900N-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industri
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