NCE70N900K Specs and Replacement

Type Designator: NCE70N900K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO-252

NCE70N900K substitution

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NCE70N900K datasheet

 ..1. Size:800K  ncepower
 nce70n900k.pdf pdf_icon

NCE70N900K

NCE70N900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust... See More ⇒

 5.1. Size:813K  ncepower
 nce70n900f.pdf pdf_icon

NCE70N900K

NCE70N900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust... See More ⇒

 5.2. Size:842K  ncepower
 nce70n900r.pdf pdf_icon

NCE70N900K

NCE70N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust... See More ⇒

 5.3. Size:826K  ncepower
 nce70n900i.pdf pdf_icon

NCE70N900K

NCE70N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and industr... See More ⇒

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Detailed specifications: NCE70N380K, NCE70N380R, NCE70N600, NCE70N600F, NCE70N600K, NCE70N900, NCE70N900F, NCE70N900I, IRFP460, NCE70N900R, NCE70T1K2F, NCE70T260I, NCE70T260K, NCE70T260T, NCE70T540, NCE70T540D, NCE70T540F

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