NCE70N900R MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCE70N900R

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 14 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: SOT-223

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NCE70N900R datasheet

 ..1. Size:842K  ncepower
 nce70n900r.pdf pdf_icon

NCE70N900R

NCE70N900R N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust

 5.1. Size:813K  ncepower
 nce70n900f.pdf pdf_icon

NCE70N900R

NCE70N900F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust

 5.2. Size:826K  ncepower
 nce70n900i.pdf pdf_icon

NCE70N900R

NCE70N900I N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 11 nC power conversion, and industr

 5.3. Size:800K  ncepower
 nce70n900k.pdf pdf_icon

NCE70N900R

NCE70N900K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 750 V DS min@Tjmax junction technology and design to provide excellent RDS(ON) R 820 m DS(ON)TYP. with low gate charge. This super junction MOSFET fits the I 5 A D industry s AC-DC SMPS requirements for PFC, AC/DC Qg 9.7 nC power conversion, and indust

MOSTRAR MÁS

Otros transistores... NCE70N380R, NCE70N600, NCE70N600F, NCE70N600K, NCE70N900, NCE70N900F, NCE70N900I, NCE70N900K, IRFZ44, NCE70T1K2F, NCE70T260I, NCE70T260K, NCE70T260T, NCE70T540, NCE70T540D, NCE70T540F, NCE70T680I