Справочник MOSFET. NCE70N900R

 

NCE70N900R Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NCE70N900R
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 700 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 5 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 5 ns
   Cossⓘ - Выходная емкость: 14 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.9 Ohm
   Тип корпуса: SOT-223
     - подбор MOSFET транзистора по параметрам

 

NCE70N900R Datasheet (PDF)

 ..1. Size:842K  ncepower
 nce70n900r.pdf pdf_icon

NCE70N900R

NCE70N900RN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 5.1. Size:813K  ncepower
 nce70n900f.pdf pdf_icon

NCE70N900R

NCE70N900FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

 5.2. Size:826K  ncepower
 nce70n900i.pdf pdf_icon

NCE70N900R

NCE70N900IN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 11 nCpower conversion, and industr

 5.3. Size:800K  ncepower
 nce70n900k.pdf pdf_icon

NCE70N900R

NCE70N900KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 750 VDS min@Tjmaxjunction technology and design to provide excellent RDS(ON)R 820 mDS(ON)TYP.with low gate charge. This super junction MOSFET fits theI 5 ADindustrys AC-DC SMPS requirements for PFC, AC/DCQg 9.7 nCpower conversion, and indust

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History: IXTX200N10L2 | CS4N65FA9R | SIHF9540 | APM7322K | 2N7002LT1 | SM7A23NSU | 2SK330

 

 
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