NCE70T260T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T260T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 131 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 74 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
Encapsulados: TO-247
Búsqueda de reemplazo de NCE70T260T MOSFET
- Selecciónⓘ de transistores por parámetros
NCE70T260T datasheet
nce70t260t.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 15 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce70t260i nce70t260k.pdf
NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t260f.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the I 15 A D industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and indust
nce70t260d nce70t260 nce70t260f.pdf
NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 15 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and
Otros transistores... NCE70N900, NCE70N900F, NCE70N900I, NCE70N900K, NCE70N900R, NCE70T1K2F, NCE70T260I, NCE70T260K, IRFB4110, NCE70T540, NCE70T540D, NCE70T540F, NCE70T680I, NCE70T680K, NCE70T900R, NCE72R60D, NCE75H21
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