NCE70T260T MOSFET. Datasheet pdf. Equivalent

   Type Designator: NCE70T260T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24.7 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 74 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO-247

NCE70T260T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

NCE70T260T Datasheet (PDF)

..1. Size:1763K ncepower
nce70t260t.pdf

NCE70T260D,NCE70T260,NCE70T260FN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 260 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 15 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and indust

5.1. Size:485K ncepower
nce70t260i nce70t260k.pdf

NCE70T260I,NCE70T260K, N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 220 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri

5.2. Size:1763K ncepower
nce70t260f.pdf

5.3. Size:612K ncepower
nce70t260d nce70t260 nce70t260f.pdf

NCE70T260D,NCE70T260,NCE70T260F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 260 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 15 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and

5.4. Size:1763K ncepower
nce70t260.pdf