NCE70T540 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCE70T540
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 69 W
Voltaje máximo drenador - fuente |Vds|: 700 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 8 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 14.6 nC
Tiempo de subida (tr): 6.5 nS
Conductancia de drenaje-sustrato (Cd): 37 pF
Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET NCE70T540
NCE70T540 Datasheet (PDF)
nce70t540f nce70t540 nce70t540d.pdf
NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and
nce70t540k.pdf
NCE70T540INCE70T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
nce70t540i.pdf
NCE70T540INCE70T540KN-Channel Super Junction Power MOSFET General DescriptionThe series of devices use advanced trench gate super V 700 VDSjunction technology and design to provide excellent RDS(ON)R 540 mDS(ON)TYPwith low gate charge. This super junction MOSFET fits theI 8 ADindustrys AC-DC SMPS requirements for PFC, AC/DCpower conversion, and industrial powe
nce70t540i nce70t540k.pdf
NCE70T540INCE70T540K N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DSjunction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYPwith low gate charge. This super junction MOSFET fits the ID 8 A industrys AC-DC SMPS requirements for PFC, AC/DC power conversion, and industri
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