NCE70T540 Specs and Replacement

Type Designator: NCE70T540

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 37 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm

Package: TO-220

NCE70T540 substitution

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NCE70T540 datasheet

 ..1. Size:603K  ncepower
nce70t540.pdf pdf_icon

NCE70T540

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 ..2. Size:603K  ncepower
nce70t540f nce70t540 nce70t540d.pdf pdf_icon

NCE70T540

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 0.1. Size:603K  ncepower
nce70t540d.pdf pdf_icon

NCE70T540

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

 0.2. Size:603K  ncepower
nce70t540f.pdf pdf_icon

NCE70T540

NCE70T540D,NCE70T540,NCE70T540F N-Channel Super Junction Power MOSFET General Description The series of devices use advanced trench gate super V 700 V DS junction technology and design to provide excellent RDS(ON) R 540 m DS(ON)TYP with low gate charge. This super junction MOSFET fits the ID 8 A industry s AC-DC SMPS requirements for PFC, AC/DC power conversion, and ... See More ⇒

Detailed specifications: NCE70N900F, NCE70N900I, NCE70N900K, NCE70N900R, NCE70T1K2F, NCE70T260I, NCE70T260K, NCE70T260T, IRF640N, NCE70T540D, NCE70T540F, NCE70T680I, NCE70T680K, NCE70T900R, NCE72R60D, NCE75H21, NCE75H21D

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